On the interface flattening effect and gate insulator breakdown characteristic of radical reaction based insulator formation technology

Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Insulator/Si interface flattening effects and gate oxide breakdown characteristics are evaluated for the oxygen radical oxidation and the wet oxidation at 750 °C. The radical oxidation is confirmed to exhibit a superior flattening effect than the wet oxidation. To obtain atomically flat top surface and interface to Si for oxides, radical oxidation on atomically flattened surfaces is indispensable. When the oxides are formed by radical oxidation on conventional flat Si surfaces with Ra > 0:12 nm, early breakdowns occur more frequently than wet oxides. These early breakdowns are eliminated when surfaces with Ra < 0:06nm are employed before oxidation. It is suggested that the early breakdowns occur at local spots that induce excess electric field due to the flattening of micro-roughness by the radical oxidation. To apply the radical reaction based insulator formation technology to the gate insulator formation, the surface before gate insulator formation must be sufficiently flattened.

Original languageEnglish
Article number02BA01
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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