On the Fth controllability for 4-terminal double-gate MOSFETs

M. Masahara, Y. X. Liu, K. Sakamoto, K. Endo, K. Ishii, T. Matsukawa, S. Hosokawa, T. Sekigawa, H. Tanoue, H. Yamauchi, S. Kanemaru, E. Suzuki

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The Vth controllability of the 4-terminal double-gate MOSFETs (4T-DGFET) was investigated using comprehensible device modeling. The fabrication of two types of 4T-DGFETs such as, Fin-type 4T-DGFT (4T-FinFET) and vertical-type 4T-DGFET (4T-VFET), were also discussed. The 4T-VFET was fabricated by modifying the layout of the gate contact pad for 3T-VFET. The results show that setting the workfunction of VthDG (i.e, of V th in the DG mode) at a low value is preferable for improvement of the performance of 4T-DGFETs.

Original languageEnglish
Pages (from-to)100-101
Number of pages2
JournalProceedings - IEEE International SOI Conference
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States
Duration: 2004 Oct 42004 Oct 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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