On the Fth controllability for 4-terminal double-gate MOSFETs

M. Masahara; Y. X. Liu; K. Sakamoto; K. Endo; K. Ishii; T. Matsukawa; S. Hosokawa; T. Sekigawa; H. Tanoue; H. Yamauchi; S. Kanemaru; E. Suzuki

On the F_th controllability for 4-terminal double-gate MOSFETs

M. Masahara, Y. X. Liu, K. Sakamoto, K. Endo, K. Ishii, T. Matsukawa, S. Hosokawa, T. Sekigawa, H. Tanoue, H. Yamauchi, S. Kanemaru, E. Suzuki

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The V_th controllability of the 4-terminal double-gate MOSFETs (4T-DGFET) was investigated using comprehensible device modeling. The fabrication of two types of 4T-DGFETs such as, Fin-type 4T-DGFT (4T-FinFET) and vertical-type 4T-DGFET (4T-VFET), were also discussed. The 4T-VFET was fabricated by modifying the layout of the gate contact pad for 3T-VFET. The results show that setting the workfunction of V_thDG (i.e, of V _th in the DG mode) at a low value is preferable for improvement of the performance of 4T-DGFETs.

Original language	English
Pages (from-to)	100-101
Number of pages	2
Journal	Proceedings - IEEE International SOI Conference
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States Duration: 2004 Oct 4 → 2004 Oct 7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "On the Fth controllability for 4-terminal double-gate MOSFETs",

abstract = "The Vth controllability of the 4-terminal double-gate MOSFETs (4T-DGFET) was investigated using comprehensible device modeling. The fabrication of two types of 4T-DGFETs such as, Fin-type 4T-DGFT (4T-FinFET) and vertical-type 4T-DGFET (4T-VFET), were also discussed. The 4T-VFET was fabricated by modifying the layout of the gate contact pad for 3T-VFET. The results show that setting the workfunction of VthDG (i.e, of V th in the DG mode) at a low value is preferable for improvement of the performance of 4T-DGFETs.",

author = "M. Masahara and Liu, {Y. X.} and K. Sakamoto and K. Endo and K. Ishii and T. Matsukawa and S. Hosokawa and T. Sekigawa and H. Tanoue and H. Yamauchi and S. Kanemaru and E. Suzuki",

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day = "1",

language = "English",

pages = "100--101",

journal = "IEEE International SOI Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE International SOI Conference, Proceedings ; Conference date: 04-10-2004 Through 07-10-2004",

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TY - JOUR

T1 - On the Fth controllability for 4-terminal double-gate MOSFETs

AU - Masahara, M.

AU - Liu, Y. X.

AU - Sakamoto, K.

AU - Endo, K.

AU - Ishii, K.

AU - Matsukawa, T.

AU - Hosokawa, S.

AU - Sekigawa, T.

AU - Tanoue, H.

AU - Yamauchi, H.

AU - Kanemaru, S.

AU - Suzuki, E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The Vth controllability of the 4-terminal double-gate MOSFETs (4T-DGFET) was investigated using comprehensible device modeling. The fabrication of two types of 4T-DGFETs such as, Fin-type 4T-DGFT (4T-FinFET) and vertical-type 4T-DGFET (4T-VFET), were also discussed. The 4T-VFET was fabricated by modifying the layout of the gate contact pad for 3T-VFET. The results show that setting the workfunction of VthDG (i.e, of V th in the DG mode) at a low value is preferable for improvement of the performance of 4T-DGFETs.

AB - The Vth controllability of the 4-terminal double-gate MOSFETs (4T-DGFET) was investigated using comprehensible device modeling. The fabrication of two types of 4T-DGFETs such as, Fin-type 4T-DGFT (4T-FinFET) and vertical-type 4T-DGFET (4T-VFET), were also discussed. The 4T-VFET was fabricated by modifying the layout of the gate contact pad for 3T-VFET. The results show that setting the workfunction of VthDG (i.e, of V th in the DG mode) at a low value is preferable for improvement of the performance of 4T-DGFETs.

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M3 - Conference article

AN - SCOPUS:20144388333

SN - 1078-621X

SP - 100

EP - 101

JO - IEEE International SOI Conference

JF - IEEE International SOI Conference

T2 - 2004 IEEE International SOI Conference, Proceedings

Y2 - 4 October 2004 through 7 October 2004

ER -

On the F_th controllability for 4-terminal double-gate MOSFETs

Abstract

ASJC Scopus subject areas

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