TY - JOUR
T1 - On the features of dislocation-obstacle interaction in thin films
T2 - Large-scale atomistic simulation
AU - Osetsky, Y. N.
AU - Matsukawa, Y.
AU - Stoller, R. E.
AU - Zinkle, S. J.
N1 - Funding Information:
This work was supported by the Division of Materials Sciences and Engineering and the Office of Fusion Energy Sciences, U.S. Department of Energy, under contract DE-AC05-00OR22725 with UT-Battelle, LLC. The authors thank Professor D. J. Bacon and Dr A. V. Barashev for numerous discussions of the results.
PY - 2006/8/1
Y1 - 2006/8/1
N2 - Large-scale atomistic modelling has demonstrated that the dynamic interactions of dislocations in thin films have a number of remarkable features. A particular example is the interaction between a screw dislocation and a stacking fault tetrahedron (SFT) in Cu, which can be directly compared with in situ observations of quenched or irradiated fcc metals. If the specimen is thin, the dislocation velocity is slow, and the temperature is high enough, a segment of the original SFT can be transported towards the surface via a double cross-slip mechanism and fast glide of an edge dislocation segment formed during the interaction. The mechanisms observed in the simulations provide an explanation for the results of in situ straining experiments and the differences between bulk and thin film experiments.
AB - Large-scale atomistic modelling has demonstrated that the dynamic interactions of dislocations in thin films have a number of remarkable features. A particular example is the interaction between a screw dislocation and a stacking fault tetrahedron (SFT) in Cu, which can be directly compared with in situ observations of quenched or irradiated fcc metals. If the specimen is thin, the dislocation velocity is slow, and the temperature is high enough, a segment of the original SFT can be transported towards the surface via a double cross-slip mechanism and fast glide of an edge dislocation segment formed during the interaction. The mechanisms observed in the simulations provide an explanation for the results of in situ straining experiments and the differences between bulk and thin film experiments.
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U2 - 10.1080/09500830600908988
DO - 10.1080/09500830600908988
M3 - Article
AN - SCOPUS:33747767988
SN - 0950-0839
VL - 86
SP - 511
EP - 519
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
IS - 8
ER -