Abstract
We herein discuss Seeger and Chik's model of extended point defects in Si crystals at high temperature based on our experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. We also show that the application of the extended model to the recombination of a vacancy and an interstitial is unsuitable, by pointing out the error in the interpretation of experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 7117-7118 |
| Number of pages | 2 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 9 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Sep 12 |
Keywords
- Interstitial
- Silicon
- Thermal equilibrium
- Vacancy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Suezawa, M., & Yonenaga, I. (2008). On the extended point defect model in Si crystals at high temperature. Japanese journal of applied physics, 47(9 PART 1), 7117-7118. https://doi.org/10.1143/JJAP.47.7117