On the extended point defect model in Si crystals at high temperature

Masashi Suezawa, Ichiro Yonenaga

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We herein discuss Seeger and Chik's model of extended point defects in Si crystals at high temperature based on our experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. We also show that the application of the extended model to the recombination of a vacancy and an interstitial is unsuitable, by pointing out the error in the interpretation of experimental results.

Original languageEnglish
Pages (from-to)7117-7118
Number of pages2
JournalJapanese journal of applied physics
Volume47
Issue number9 PART 1
DOIs
Publication statusPublished - 2008 Sep 12

Keywords

  • Interstitial
  • Silicon
  • Thermal equilibrium
  • Vacancy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'On the extended point defect model in Si crystals at high temperature'. Together they form a unique fingerprint.

  • Cite this