On the extended point defect model in Si crystals at high temperature

Masashi Suezawa; Ichiro Yonenaga

doi:10.1143/JJAP.47.7117

On the extended point defect model in Si crystals at high temperature

Masashi Suezawa, Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We herein discuss Seeger and Chik's model of extended point defects in Si crystals at high temperature based on our experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. We also show that the application of the extended model to the recombination of a vacancy and an interstitial is unsuitable, by pointing out the error in the interpretation of experimental results.

Original language	English
Pages (from-to)	7117-7118
Number of pages	2
Journal	Japanese journal of applied physics
Volume	47
Issue number	9 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.7117
Publication status	Published - 2008 Sep 12

Keywords

Interstitial
Silicon
Thermal equilibrium
Vacancy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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AU - Yonenaga, Ichiro

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AB - We herein discuss Seeger and Chik's model of extended point defects in Si crystals at high temperature based on our experimental results on the diffusion constant of vacancies at high temperature and the vacancy formation energy. We also show that the application of the extended model to the recombination of a vacancy and an interstitial is unsuitable, by pointing out the error in the interpretation of experimental results.

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KW - Thermal equilibrium

KW - Vacancy

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SN - 0021-4922

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ER -

On the extended point defect model in Si crystals at high temperature

Abstract

Keywords

ASJC Scopus subject areas

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