On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

Koichi Fukuda, Takahiro Mori, Hidehiro Asai, Junichi Hattori, Wataru Mizubayashi, Yukinori Morita, Hiroshi Fuketa, Shinji Migita, Hiroyuki Ota, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa

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Physics & Astronomy

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