Abstract
We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.
Original language | English |
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Article number | 073502 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2012 Feb 13 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)