ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya; Moon Young Yang; Seong Geon Park; Blanka Magyari-Köpe; Yoshio Nishi; Masaaki Niwa; Kenji Shiraishi

doi:10.1063/1.3685222

ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V _O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V _O configurations with 2 charges. The V _O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V _O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.

Original language	English
Article number	073502
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3685222
Publication status	Published - 2012 Feb 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3685222

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title = "ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels",

abstract = "We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.",

author = "Katsumasa Kamiya and {Young Yang}, Moon and Park, {Seong Geon} and Blanka Magyari-K{\"o}pe and Yoshio Nishi and Masaaki Niwa and Kenji Shiraishi",

note = "Funding Information: Computations were performed on a NEC SX-9 at the Institute for Solid-State Physics, The University of Tokyo, and a Fujitsu PrimeQuest at the Research Center for Computational Science, Okazaki Research Facilities, National Institutes of Natural Sciences. This research was supported by a Grant-in-Aid for Young Scientists (B) (No. 22740259) from the Japan Society for the Promotion of Science.",

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T1 - ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

AU - Kamiya, Katsumasa

AU - Young Yang, Moon

AU - Park, Seong Geon

AU - Magyari-Köpe, Blanka

AU - Nishi, Yoshio

AU - Niwa, Masaaki

AU - Shiraishi, Kenji

N1 - Funding Information: Computations were performed on a NEC SX-9 at the Institute for Solid-State Physics, The University of Tokyo, and a Fujitsu PrimeQuest at the Research Center for Computational Science, Okazaki Research Facilities, National Institutes of Natural Sciences. This research was supported by a Grant-in-Aid for Young Scientists (B) (No. 22740259) from the Japan Society for the Promotion of Science.

PY - 2012/2/13

Y1 - 2012/2/13

N2 - We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.

AB - We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.

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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

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