ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya; Moon Young Yang; Seong Geon Park; Blanka Magyari-Köpe; Yoshio Nishi; Masaaki Niwa; Kenji Shiraishi

doi:10.1063/1.3685222

ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V _O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V _O configurations with 2 charges. The V _O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V _O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.

Original language	English
Article number	073502
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3685222
Publication status	Published - 2012 Feb 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels. / Kamiya, Katsumasa; Young Yang, Moon; Park, Seong Geon; Magyari-Köpe, Blanka; Nishi, Yoshio; Niwa, Masaaki; Shiraishi, Kenji.

In: Applied Physics Letters, Vol. 100, No. 7, 073502, 13.02.2012.

Research output: Contribution to journal › Article › peer-review

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