ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi

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81 Citations (Scopus)

Abstract

We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.

Original languageEnglish
Article number073502
JournalApplied Physics Letters
Volume100
Issue number7
DOIs
Publication statusPublished - 2012 Feb 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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