We study the ON-OFF switching mechanism of oxide-based resistive-random- access-memories using theoretical calculations. Electron deficient vacancies (V O) up to 1 charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted V O configurations with 2 charges. The V O cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into V O. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)