On-current variability sources of FinFETs: Analysis and perspective for 14nm-Lg technology

T. Matsukawa, Y. X. Liu, K. Endo, S. O'Uchi, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

On-current (Ion) variability in FinFETs is comprehensively investigated with regard to contributions of three independent sources, namely, threshold voltage (Vt), parasitic resistance (Rpara) and trans-conductance (Gm) variations. Origins of the Vt and Rpara variations are further analyzed. The Gm variation exhibits a linear relationship in Pelgrom plot as well as the Vt variation, and is not reduced with scaling the gate dielectric thickness unlike the Vt variation. Using the scalability data for the variation components, perspective of the Ion variability for 14-nm FinFETs reveals that the Gm variation will be the dominant Ion variation source. A solution to reduce the Gm variation for FinFETs is also proposed.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Pages231-242
Number of pages12
Edition6
DOIs
Publication statusPublished - 2012 Nov 19
Externally publishedYes
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number6
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

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