An on-chip supply voltage conversion system for VLSI DRAMs, which realizes supply voltage reduction in whole RAM circuits, is proposed and applied to a 4Mb DRAM. Implementing the system on a DRAM, short channel MOSFETs could be utilized, thus achieving faster access time than a DRAM using conventional long channel MOSFETs. The system has been successfully demonstrated to be effective for high density and high speed DRAMs.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|Publication status||Published - 1986 Dec 1|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas