Off-angle dependence of characteristics of 4H-SiC-oxide interfaces

Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
    PublisherTrans Tech Publications Ltd
    Pages1003-1006
    Number of pages4
    EditionPART 2
    ISBN (Print)9780878494255
    DOIs
    Publication statusPublished - 2006
    EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
    Duration: 2005 Sep 182005 Sep 23

    Publication series

    NameMaterials Science Forum
    NumberPART 2
    Volume527-529
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
    CountryUnited States
    CityPittsburgh, PA
    Period05/9/1805/9/23

    Keywords

    • (0001̄) C-face
    • Capacitance-voltage measurement
    • Interface state density
    • Off-angle
    • Oxide-SiC interface
    • Photoemission spectroscopy
    • Suboxide
    • Wet and dry oxidation

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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