Off-angle dependence of characteristics of 4H-SiC-oxide interfaces

Y. Hijikata; H. Yaguchi; S. Yoshida; Y. Takata; K. Kobayashi; H. Nohira; T. Hattori

doi:10.4028/0-87849-425-1.1003

Off-angle dependence of characteristics of 4H-SiC-oxide interfaces

Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, T. Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (N_it) and the amount of sub-oxides (S _i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small N_it and S_i values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.

Original language	English
Title of host publication	Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Publisher	Trans Tech Publications Ltd
Pages	1003-1006
Number of pages	4
Edition	PART 2
ISBN (Print)	9780878494255
DOIs	https://doi.org/10.4028/0-87849-425-1.1003
Publication status	Published - 2006
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: 2005 Sep 18 → 2005 Sep 23

Publication series

Name	Materials Science Forum
Number	PART 2
Volume	527-529
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/Territory	United States
City	Pittsburgh, PA
Period	05/9/18 → 05/9/23

Keywords

(0001̄) C-face
Capacitance-voltage measurement
Interface state density
Off-angle
Oxide-SiC interface
Photoemission spectroscopy
Suboxide
Wet and dry oxidation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-425-1.1003

Cite this

Hijikata, Y., Yaguchi, H., Yoshida, S., Takata, Y., Kobayashi, K., Nohira, H., & Hattori, T. (2006). Off-angle dependence of characteristics of 4H-SiC-oxide interfaces. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 1003-1006). (Materials Science Forum; Vol. 527-529, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.1003

Off-angle dependence of characteristics of 4H-SiC-oxide interfaces. / Hijikata, Y.; Yaguchi, H.; Yoshida, S.; Takata, Y.; Kobayashi, K.; Nohira, H.; Hattori, T.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. Trans Tech Publications Ltd, 2006. p. 1003-1006 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hijikata, Y, Yaguchi, H, Yoshida, S, Takata, Y, Kobayashi, K, Nohira, H & Hattori, T 2006, Off-angle dependence of characteristics of 4H-SiC-oxide interfaces. in Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 edn, Materials Science Forum, no. PART 2, vol. 527-529, Trans Tech Publications Ltd, pp. 1003-1006, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 05/9/18. https://doi.org/10.4028/0-87849-425-1.1003

Hijikata Y, Yaguchi H, Yoshida S, Takata Y, Kobayashi K, Nohira H et al. Off-angle dependence of characteristics of 4H-SiC-oxide interfaces. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd. 2006. p. 1003-1006. (Materials Science Forum; PART 2). https://doi.org/10.4028/0-87849-425-1.1003

Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Takata, Y. ; Kobayashi, K. ; Nohira, H. ; Hattori, T. / Off-angle dependence of characteristics of 4H-SiC-oxide interfaces. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. ed. Trans Tech Publications Ltd, 2006. pp. 1003-1006 (Materials Science Forum; PART 2).

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abstract = "SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.",

keywords = "(000{\=1}) C-face, Capacitance-voltage measurement, Interface state density, Off-angle, Oxide-SiC interface, Photoemission spectroscopy, Suboxide, Wet and dry oxidation",

author = "Y. Hijikata and H. Yaguchi and S. Yoshida and Y. Takata and K. Kobayashi and H. Nohira and T. Hattori",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",

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AU - Hijikata, Y.

AU - Yaguchi, H.

AU - Yoshida, S.

AU - Takata, Y.

AU - Kobayashi, K.

AU - Nohira, H.

AU - Hattori, T.

PY - 2006

Y1 - 2006

N2 - SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.

AB - SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.

KW - (0001̄) C-face

KW - Capacitance-voltage measurement

KW - Interface state density

KW - Off-angle

KW - Oxide-SiC interface

KW - Photoemission spectroscopy

KW - Suboxide

KW - Wet and dry oxidation

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ER -

Off-angle dependence of characteristics of 4H-SiC-oxide interfaces

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