TY - GEN
T1 - Off-angle dependence of characteristics of 4H-SiC-oxide interfaces
AU - Hijikata, Y.
AU - Yaguchi, H.
AU - Yoshida, S.
AU - Takata, Y.
AU - Kobayashi, K.
AU - Nohira, H.
AU - Hattori, T.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.
AB - SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. We found that the interface state density (Nit) and the amount of sub-oxides (S i) for small off-angle substrates were smaller than those for large off-angle ones. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates.
KW - (0001̄) C-face
KW - Capacitance-voltage measurement
KW - Interface state density
KW - Off-angle
KW - Oxide-SiC interface
KW - Photoemission spectroscopy
KW - Suboxide
KW - Wet and dry oxidation
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U2 - 10.4028/0-87849-425-1.1003
DO - 10.4028/0-87849-425-1.1003
M3 - Conference contribution
AN - SCOPUS:37849053034
SN - 9780878494255
T3 - Materials Science Forum
SP - 1003
EP - 1006
BT - Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
PB - Trans Tech Publications Ltd
T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Y2 - 18 September 2005 through 23 September 2005
ER -