Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.

Original languageEnglish
Title of host publication2009 13th European Conference on Power Electronics and Applications, EPE '09
Publication statusPublished - 2009 Dec 1
Event2009 13th European Conference on Power Electronics and Applications, EPE '09 - Barcelona, Spain
Duration: 2009 Sep 82009 Sep 10

Other

Other2009 13th European Conference on Power Electronics and Applications, EPE '09
CountrySpain
CityBarcelona
Period09/9/809/9/10

Keywords

  • Accumulation mode
  • Bulk current
  • High temperature
  • LDMOSFET
  • Self-heating
  • Silicon-on-insulator

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure'. Together they form a unique fingerprint.

Cite this