Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

T. Someya; H. Fukidome; Y. Ishida; R. Yoshida; T. Iimori; R. Yukawa; K. Akikubo; Sh Yamamoto; S. Yamamoto; T. Yamamoto; T. Kanai; K. Funakubo; M. Suemitsu; J. Itatani; F. Komori; S. Shin; I. Matsuda

doi:10.1063/1.4871381

Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

T. Someya, H. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda

Information Devices Division

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18 Citations (Scopus)

Abstract

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

Original language	English
Article number	161103
Journal	Applied Physics Letters
Volume	104
Issue number	16
DOIs	https://doi.org/10.1063/1.4871381
Publication status	Published - 2014 Apr 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4871381

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Someya, T., Fukidome, H., Ishida, Y., Yoshida, R., Iimori, T., Yukawa, R., Akikubo, K., Yamamoto, S., Yamamoto, S., Yamamoto, T., Kanai, T., Funakubo, K., Suemitsu, M., Itatani, J., Komori, F., Shin, S., & Matsuda, I. (2014). Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate. Applied Physics Letters, 104(16), [161103]. https://doi.org/10.1063/1.4871381

Someya, T, Fukidome, H, Ishida, Y, Yoshida, R, Iimori, T, Yukawa, R, Akikubo, K, Yamamoto, S, Yamamoto, S, Yamamoto, T, Kanai, T, Funakubo, K, Suemitsu, M, Itatani, J, Komori, F, Shin, S & Matsuda, I 2014, 'Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate', Applied Physics Letters, vol. 104, no. 16, 161103. https://doi.org/10.1063/1.4871381

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AU - Someya, T.

AU - Fukidome, H.

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AU - Yoshida, R.

AU - Iimori, T.

AU - Yukawa, R.

AU - Akikubo, K.

AU - Yamamoto, Sh

AU - Yamamoto, S.

AU - Yamamoto, T.

AU - Kanai, T.

AU - Funakubo, K.

AU - Suemitsu, M.

AU - Itatani, J.

AU - Komori, F.

AU - Shin, S.

AU - Matsuda, I.

PY - 2014/4/21

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Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

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