Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

T. Someya, Hirokazu Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, Maki Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

Original languageEnglish
Article number161103
JournalApplied Physics Letters
Volume104
Issue number16
DOIs
Publication statusPublished - 2014 Apr 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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