Abstract
Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.
Original language | English |
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Article number | 161103 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2014 Apr 21 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)