Observations of defects in LPE GaAs revealed by new chemical etchant

J. Nishizawa, Y. Oyama, H. Tadano, K. Inokuchi, Y. Okuno

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16 Citations (Scopus)


The behavior of dislocations in the interfacial region between the epitaxial layer grown from the liquid phase and the substrate of GaAs is investigated. Observations of dislocations lying along the 〈110〉 directions were carried out using an optical microscope after shallow etching with a new chemical etchant. The dislocations are traced by the repetition of etching from epitaxial layer to the interface. The results show that dislocations in the substrates are expected to bend along the direction normal to the epitaxial growth direction at the interface.

Original languageEnglish
Pages (from-to)434-436
Number of pages3
JournalJournal of Crystal Growth
Issue number3
Publication statusPublished - 1979 Sep

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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