Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface

Y. Wu; N. Shigemori; S. Sato; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3567402

Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface

Y. Wu, N. Shigemori, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P⁺ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.

Original language	English
Title of host publication	Solid State Topics (General) - 218th ECS Meeting
Publisher	Electrochemical Society Inc.
Pages	47-52
Number of pages	6
Edition	31
ISBN (Electronic)	9781566778893
ISBN (Print)	9781607682417
DOIs	https://doi.org/10.1149/1.3567402
Publication status	Published - 2010
Event	Solid State Topics General Session - 218th ECS Meeting - Las Vegas, NV, United States Duration: 2010 Oct 10 → 2010 Oct 15

Publication series

Name	ECS Transactions
Number	31
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Solid State Topics General Session - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	10/10/10 → 10/10/15

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3567402

Cite this

Wu, Y., Shigemori, N., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface. In Solid State Topics (General) - 218th ECS Meeting (31 ed., pp. 47-52). (ECS Transactions; Vol. 33, No. 31). Electrochemical Society Inc.. https://doi.org/10.1149/1.3567402

Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface. / Wu, Y.; Shigemori, N.; Sato, S.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Solid State Topics (General) - 218th ECS Meeting. 31. ed. Electrochemical Society Inc., 2010. p. 47-52 (ECS Transactions; Vol. 33, No. 31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, Y, Shigemori, N, Sato, S, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2010, Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface. in Solid State Topics (General) - 218th ECS Meeting. 31 edn, ECS Transactions, no. 31, vol. 33, Electrochemical Society Inc., pp. 47-52, Solid State Topics General Session - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3567402

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abstract = "Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.",

author = "Y. Wu and N. Shigemori and S. Sato and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

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AU - Tsutsui, K.

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AU - Sugii, N.

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AB - Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.

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Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface

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