Abstract
Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.
Original language | English |
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Title of host publication | Solid State Topics (General) - 218th ECS Meeting |
Publisher | Electrochemical Society Inc. |
Pages | 47-52 |
Number of pages | 6 |
Edition | 31 |
ISBN (Electronic) | 9781566778893 |
ISBN (Print) | 9781607682417 |
DOIs | |
Publication status | Published - 2010 |
Event | Solid State Topics General Session - 218th ECS Meeting - Las Vegas, NV, United States Duration: 2010 Oct 10 → 2010 Oct 15 |
Publication series
Name | ECS Transactions |
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Number | 31 |
Volume | 33 |
ISSN (Print) | 1938-5862 |
ISSN (Electronic) | 1938-6737 |
Other
Other | Solid State Topics General Session - 218th ECS Meeting |
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Country/Territory | United States |
City | Las Vegas, NV |
Period | 10/10/10 → 10/10/15 |
ASJC Scopus subject areas
- Engineering(all)