Observation of the zero-field spin splitting of the second subband in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure

C. M. Hu, Junsaku Nitta, T. Akazaki, H. Takayanagi, J. Osaka, P. Pfeffer, W. Zawadzki

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magneto transport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov-de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and their analysis show that the band nonparbolicity effect cannot be neglected. For electron concentrations above 2×1012 cm-2, it causes a reduction of α up to 25%. We report for the first time the α value for the second subband.

Original languageEnglish
Pages (from-to)767-770
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Duration: 1999 Aug 11999 Aug 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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