Observation of the Si(111)7 × 7 atomic structure using non-contact scanning nonlinear dielectric microscopy

Ryusuke Hirose, Koya Ohara, Yasuo Cho

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) operated under ultra high vacuum (UHV) conditions was developed. This microscopy enables the simultaneous measurement of the topography and dielectric properties of a specimen. For electrically conductive materials, the tunnelling current is also measurable. The atomic structure of Si(111)7 × 7 was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements.

Original languageEnglish
Article number084014
JournalNanotechnology
Volume18
Issue number8
DOIs
Publication statusPublished - 2007 Feb 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

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