Abstract
Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) operated under ultra high vacuum (UHV) conditions was developed. This microscopy enables the simultaneous measurement of the topography and dielectric properties of a specimen. For electrically conductive materials, the tunnelling current is also measurable. The atomic structure of Si(111)7 × 7 was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements.
| Original language | English |
|---|---|
| Article number | 084014 |
| Journal | Nanotechnology |
| Volume | 18 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2007 Feb 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials