Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy

Yoshiaki Nakamura, Kentaro Watanabe, Yo Fukuzawa, Masakazu Ichikawa

Research output: Contribution to journalArticlepeer-review

108 Citations (Scopus)

Abstract

Scanning tunneling spectroscopic studies revealed the quantum-confinement effects in Ge nanocrystals formed with ultrahigh density (> 1012 cm-2) by Ge deposition on ultrathin Si oxide films. With decreasing crystal size, the conduction band maximum upshifted and the valence band minimum downshifted. The energy shift in both cases was about 0.7 eV with the size change from 7 to 2 nm. This shows that the energy band gaps of Ge nanocrystals increased to ∼1.4 eV with decreasing size. This size dependence can be explained by the quantum-confinement effect in Ge nanocrystals.

Original languageEnglish
Article number133119
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number13
DOIs
Publication statusPublished - 2005 Sep 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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