Observation of SrTi O3 in-gap states by depletion mode field effect

Keisuke Shibuya, Tsuyoshi Ohnishi, Takayuki Uozumi, Taisuke Sato, Kazunori Nishio, Mikk Lippmaa

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    We have fabricated SrTi O3 (100) single crystal field-effect transistors with epitaxial and amorphous DySc O3 gate insulator layers. The devices showed an on-off ratio of 107 with a field-effect mobility of over 100 cm2 V s at 50 K. The residual oxygen vacancy concentration in the transistor channel was adjusted so that the off-state current was high at room temperature but dropped sharply upon cooling. The temperature dependence of the channel current under a carrier-depleting gate bias was used to show that oxygen vacancies form an in-gap impurity state at about 0.24 eV below the SrTi O3 mobility edge.

    Original languageEnglish
    Article number032109
    JournalApplied Physics Letters
    Volume92
    Issue number3
    DOIs
    Publication statusPublished - 2008 Feb 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint Dive into the research topics of 'Observation of SrTi O3 in-gap states by depletion mode field effect'. Together they form a unique fingerprint.

  • Cite this

    Shibuya, K., Ohnishi, T., Uozumi, T., Sato, T., Nishio, K., & Lippmaa, M. (2008). Observation of SrTi O3 in-gap states by depletion mode field effect. Applied Physics Letters, 92(3), [032109]. https://doi.org/10.1063/1.2837627