Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi; K. Nakajima; M. Suzuki; K. Kimura; Y. Shimizu; S. Fukatsu; K. M. Itoh; M. Uematsu; H. Kageshima; K. Shiraishi

doi:10.1016/j.nimb.2006.04.036

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, K. Shiraishi

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

An epitaxially grown Si isotope heterostructure, ²⁸Si(2 nm)/³⁰Si(1 nm)/^natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of ³⁰Si into the ^natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted ³⁰Si into the ²⁸SiO₂ layer was found to be less than 5 at.% in the oxidation at 1100 °C.

Original language	English
Pages (from-to)	390-393
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.04.036
Publication status	Published - 2006 Aug
Externally published	Yes

Keywords

Diffusion
HRBS
Si emission
Si isotope
SiO
Thermal oxidation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2006.04.036

Cite this

Hosoi, S., Nakajima, K., Suzuki, M., Kimura, K., Shimizu, Y., Fukatsu, S., Itoh, K. M., Uematsu, M., Kageshima, H., & Shiraishi, K. (2006). Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 SPEC. ISS.), 390-393. https://doi.org/10.1016/j.nimb.2006.04.036

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. / Hosoi, S.; Nakajima, K.; Suzuki, M.; Kimura, K.; Shimizu, Y.; Fukatsu, S.; Itoh, K. M.; Uematsu, M.; Kageshima, H.; Shiraishi, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 390-393.

Research output: Contribution to journal › Article › peer-review

Hosoi, S, Nakajima, K, Suzuki, M, Kimura, K, Shimizu, Y, Fukatsu, S, Itoh, KM, Uematsu, M, Kageshima, H & Shiraishi, K 2006, 'Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 249, no. 1-2 SPEC. ISS., pp. 390-393. https://doi.org/10.1016/j.nimb.2006.04.036

Hosoi, S. ; Nakajima, K. ; Suzuki, M. ; Kimura, K. ; Shimizu, Y. ; Fukatsu, S. ; Itoh, K. M. ; Uematsu, M. ; Kageshima, H. ; Shiraishi, K. / Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 390-393.

@article{89a1af78ecc349209ffd265ce53198c1,

title = "Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS",

abstract = "An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.",

keywords = "Diffusion, HRBS, Si emission, Si isotope, SiO, Thermal oxidation",

author = "S. Hosoi and K. Nakajima and M. Suzuki and K. Kimura and Y. Shimizu and S. Fukatsu and Itoh, {K. M.} and M. Uematsu and H. Kageshima and K. Shiraishi",

note = "Funding Information: This work was supported in part by “Nanotechnology Support Project” and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology. This work was also supported by the Center of Excellence for Research and Education on Complex Functional Mechanical Systems (COE program) of the Ministry of Education, Culture, Sports, Science and Technology.",

year = "2006",

month = aug,

doi = "10.1016/j.nimb.2006.04.036",

language = "English",

volume = "249",

pages = "390--393",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

AU - Hosoi, S.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Kimura, K.

AU - Shimizu, Y.

AU - Fukatsu, S.

AU - Itoh, K. M.

AU - Uematsu, M.

AU - Kageshima, H.

AU - Shiraishi, K.

N1 - Funding Information: This work was supported in part by “Nanotechnology Support Project” and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology. This work was also supported by the Center of Excellence for Research and Education on Complex Functional Mechanical Systems (COE program) of the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2006/8

Y1 - 2006/8

N2 - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

AB - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

KW - Diffusion

KW - HRBS

KW - Si emission

KW - Si isotope

KW - SiO

KW - Thermal oxidation

UR - http://www.scopus.com/inward/record.url?scp=33745849198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745849198&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.04.036

DO - 10.1016/j.nimb.2006.04.036

M3 - Article

AN - SCOPUS:33745849198

VL - 249

SP - 390

EP - 393

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2 SPEC. ISS.

ER -

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this