Abstract
An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.
Original language | English |
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Pages (from-to) | 390-393 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 249 |
Issue number | 1-2 SPEC. ISS. |
DOIs | |
Publication status | Published - 2006 Aug |
Externally published | Yes |
Keywords
- Diffusion
- HRBS
- Si emission
- Si isotope
- SiO
- Thermal oxidation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation