Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi; K. Nakajima; M. Suzuki; K. Kimura; Y. Shimizu; S. Fukatsu; K. M. Itoh; M. Uematsu; H. Kageshima; K. Shiraishi

doi:10.1016/j.nimb.2006.04.036

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, K. Shiraishi

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

An epitaxially grown Si isotope heterostructure, ²⁸Si(2 nm)/³⁰Si(1 nm)/^natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of ³⁰Si into the ^natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted ³⁰Si into the ²⁸SiO₂ layer was found to be less than 5 at.% in the oxidation at 1100 °C.

Original language	English
Pages (from-to)	390-393
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.04.036
Publication status	Published - 2006 Aug 1
Externally published	Yes

Keywords

Diffusion
HRBS
Si emission
Si isotope
SiO
Thermal oxidation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Hosoi, S., Nakajima, K., Suzuki, M., Kimura, K., Shimizu, Y., Fukatsu, S., Itoh, K. M., Uematsu, M., Kageshima, H., & Shiraishi, K. (2006). Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 SPEC. ISS.), 390-393. https://doi.org/10.1016/j.nimb.2006.04.036

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. / Hosoi, S.; Nakajima, K.; Suzuki, M.; Kimura, K.; Shimizu, Y.; Fukatsu, S.; Itoh, K. M.; Uematsu, M.; Kageshima, H.; Shiraishi, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 01.08.2006, p. 390-393.

Research output: Contribution to journal › Article

Hosoi, S, Nakajima, K, Suzuki, M, Kimura, K, Shimizu, Y, Fukatsu, S, Itoh, KM, Uematsu, M, Kageshima, H & Shiraishi, K 2006, 'Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 249, no. 1-2 SPEC. ISS., pp. 390-393. https://doi.org/10.1016/j.nimb.2006.04.036

Hosoi, S. ; Nakajima, K. ; Suzuki, M. ; Kimura, K. ; Shimizu, Y. ; Fukatsu, S. ; Itoh, K. M. ; Uematsu, M. ; Kageshima, H. ; Shiraishi, K. / Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 390-393.

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title = "Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS",

abstract = "An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.",

keywords = "Diffusion, HRBS, Si emission, Si isotope, SiO, Thermal oxidation",

author = "S. Hosoi and K. Nakajima and M. Suzuki and K. Kimura and Y. Shimizu and S. Fukatsu and Itoh, {K. M.} and M. Uematsu and H. Kageshima and K. Shiraishi",

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T1 - Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

AU - Hosoi, S.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Kimura, K.

AU - Shimizu, Y.

AU - Fukatsu, S.

AU - Itoh, K. M.

AU - Uematsu, M.

AU - Kageshima, H.

AU - Shiraishi, K.

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N2 - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

AB - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

KW - Diffusion

KW - HRBS

KW - Si emission

KW - Si isotope

KW - SiO

KW - Thermal oxidation

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