TY - JOUR
T1 - Observation of residual-type thin absorber defect on extreme ultraviolet lithography mask using an extreme ultraviolet microscope
AU - Amano, Tsuyoshi
AU - Iida, Susumu
AU - Hirano, Ryoichi
AU - Terasawa, Tsuneo
AU - Watanabe, Hidehiro
AU - Yamasoe, Kenjiro
AU - Toyoda, Mitsunori
AU - Tokimasa, Akifumi
AU - Harada, Tetsuo
AU - Watanabe, Takeo
AU - Kinoshita, Hiroo
PY - 2013/4
Y1 - 2013/4
N2 - A local etching technique using electron beams has been proposed to repair defects on an absorber pattern. In this paper, the effect of pattern contrast over a thin absorber film left on a multilayer was examined. Various residual absorber films on the multilayer were fabricated and examined using an extreme ultraviolet (EUV) microscope employed as an at-wavelength mask pattern inspection tool. As a result, the contrast decreased by 30% in the remaining thickness of 2.9nm for half-pitch 225nm features. The EUV microscope proved to be an effective tool for examining the post repair effects.
AB - A local etching technique using electron beams has been proposed to repair defects on an absorber pattern. In this paper, the effect of pattern contrast over a thin absorber film left on a multilayer was examined. Various residual absorber films on the multilayer were fabricated and examined using an extreme ultraviolet (EUV) microscope employed as an at-wavelength mask pattern inspection tool. As a result, the contrast decreased by 30% in the remaining thickness of 2.9nm for half-pitch 225nm features. The EUV microscope proved to be an effective tool for examining the post repair effects.
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U2 - 10.7567/APEX.6.046501
DO - 10.7567/APEX.6.046501
M3 - Article
AN - SCOPUS:84880897033
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
M1 - 046501
ER -