Observation of residual-type thin absorber defect on extreme ultraviolet lithography mask using an extreme ultraviolet microscope

Tsuyoshi Amano, Susumu Iida, Ryoichi Hirano, Tsuneo Terasawa, Hidehiro Watanabe, Kenjiro Yamasoe, Mitsunori Toyoda, Akifumi Tokimasa, Tetsuo Harada, Takeo Watanabe, Hiroo Kinoshita

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A local etching technique using electron beams has been proposed to repair defects on an absorber pattern. In this paper, the effect of pattern contrast over a thin absorber film left on a multilayer was examined. Various residual absorber films on the multilayer were fabricated and examined using an extreme ultraviolet (EUV) microscope employed as an at-wavelength mask pattern inspection tool. As a result, the contrast decreased by 30% in the remaining thickness of 2.9nm for half-pitch 225nm features. The EUV microscope proved to be an effective tool for examining the post repair effects.

Original languageEnglish
Article number046501
JournalApplied Physics Express
Volume6
Issue number4
DOIs
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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