Observation of rebirth of metallic paths during resistance switching of metal nanowire

K. Horiba; K. Fujiwara; N. Nagamura; S. Toyoda; H. Kumigashira; M. Oshima; H. Takagi

doi:10.1063/1.4829469

Observation of rebirth of metallic paths during resistance switching of metal nanowire

K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, H. Takagi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (E_F) in a high-resistance state and recovery of a finite DOS at E_F in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

Original language	English
Article number	193114
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829469
Publication status	Published - 2013 Nov 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Observation of rebirth of metallic paths during resistance switching of metal nanowire",

abstract = "To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (EF) in a high-resistance state and recovery of a finite DOS at EF in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.",

author = "K. Horiba and K. Fujiwara and N. Nagamura and S. Toyoda and H. Kumigashira and M. Oshima and H. Takagi",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program), Japan Science and Technology Agency (JST), Core Research for Evolutional Science and Technology (CREST)” and Cooperative Research Program of “Network Joint Research Center for Materials and Devices.” This work was performed using a facility of the Synchrotron Radiation Research Organization, the University of Tokyo (Proposal Nos. 7402 for 2009-2011 and 2011B7419).",

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doi = "10.1063/1.4829469",

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T1 - Observation of rebirth of metallic paths during resistance switching of metal nanowire

AU - Horiba, K.

AU - Fujiwara, K.

AU - Nagamura, N.

AU - Toyoda, S.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Takagi, H.

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program), Japan Science and Technology Agency (JST), Core Research for Evolutional Science and Technology (CREST)” and Cooperative Research Program of “Network Joint Research Center for Materials and Devices.” This work was performed using a facility of the Synchrotron Radiation Research Organization, the University of Tokyo (Proposal Nos. 7402 for 2009-2011 and 2011B7419).

PY - 2013/11/4

Y1 - 2013/11/4

N2 - To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (EF) in a high-resistance state and recovery of a finite DOS at EF in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

AB - To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (EF) in a high-resistance state and recovery of a finite DOS at EF in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

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Observation of rebirth of metallic paths during resistance switching of metal nanowire

Abstract

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