Observation of rebirth of metallic paths during resistance switching of metal nanowire

K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, H. Takagi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (EF) in a high-resistance state and recovery of a finite DOS at EF in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

Original languageEnglish
Article number193114
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
Publication statusPublished - 2013 Nov 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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