Observation of polarization and two dimensional electron gas in AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy

K. Hirose, N. Chinone, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We measured AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AIGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AIGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AIGaN/GaN heterostructure.

Original languageEnglish
Title of host publicationISTFA 2015 - Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis
PublisherASM International
Pages333-335
Number of pages3
ISBN (Electronic)162708102X, 9781627081023
Publication statusPublished - 2015 Jan 1
Event41st International Symposium for Testing and Failure Analysis, ISTFA 2015 - Portland, United States
Duration: 2015 Nov 12015 Nov 5

Publication series

NameConference Proceedings from the International Symposium for Testing and Failure Analysis
Volume2015-January

Other

Other41st International Symposium for Testing and Failure Analysis, ISTFA 2015
CountryUnited States
CityPortland
Period15/11/115/11/5

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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