TY - GEN
T1 - Observation of polarization and two dimensional electron gas in AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy
AU - Hirose, K.
AU - Chinone, N.
AU - Cho, Yasuo
PY - 2015/1/1
Y1 - 2015/1/1
N2 - We measured AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AIGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AIGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AIGaN/GaN heterostructure.
AB - We measured AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AIGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AIGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AIGaN/GaN heterostructure.
UR - http://www.scopus.com/inward/record.url?scp=84962399010&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84962399010&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84962399010
T3 - Conference Proceedings from the International Symposium for Testing and Failure Analysis
SP - 333
EP - 335
BT - ISTFA 2015 - Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis
PB - ASM International
T2 - 41st International Symposium for Testing and Failure Analysis, ISTFA 2015
Y2 - 1 November 2015 through 5 November 2015
ER -