Persistent spectral hole burning (PSHB) has been observed at 110 K in (Formula presented) exchanged (Formula presented) β″-alumina crystals. This is the highest burning temperature for PSHB in (Formula presented) doped materials. It is found that the long lived holes at high temperature are caused by light-induced local motion of ions surrounding the (Formula presented) ions. The results both of hole relaxation and temperature cycling measurements can be well interpreted by a hopping model with a Gaussian distributed barrier height.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1996 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics