Observation of negative contact resistances in graphene field-effect transistors

Ryo Nouchi, Tatsuya Saito, Katsumi Tanigaki

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The gate-voltage (V G) dependence of the contact resistance (R C) in graphene field-effect transistors is characterized by the transmission line model. The R C-V G characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative R C originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more substantial than the actual contact resistance precisely at the contacts. The negative R C can appear at the metal contacts to Dirac-cone systems such as graphene.

Original languageEnglish
Article number084314
JournalJournal of Applied Physics
Volume111
Issue number8
DOIs
Publication statusPublished - 2012 Apr 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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