Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes

Takeo Koike, Mikihiko Oogane, Tetsurou Takada, Hidekazu Saito, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm2 at Vbias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.

Original languageEnglish
Article number7929336
JournalIEEE Transactions on Magnetics
Volume53
Issue number11
DOIs
Publication statusPublished - 2017 Nov

Keywords

  • Spin injection in semiconductor (SC)
  • spin transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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