Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique

Takashi Sekiguchi, Jun Chen, Masami Takase, Naoki Fukata, Naoto Umezawa, Kenji Ohmori, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe, Sciji Inumiya, Yasuo Nara

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.

Original languageEnglish
Pages (from-to)449-454
Number of pages6
JournalSolid State Phenomena
Volume131-133
Publication statusPublished - 2008 Jan 1
Event12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italy
Duration: 2007 Oct 142007 Oct 19

Keywords

  • EBIC
  • High-k
  • Leakage sites
  • MOSFET

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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