Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

J. Chen; T. Sekiguchi; N. Fukata; M. Takase; T. Chikyow; K. Yamabe; R. Hasunuma; Y. Akasaka; S. Inumiya; Y. Nara; K. Yamada

doi:10.1063/1.2392988

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.

Original language	English
Article number	222104
Journal	Applied Physics Letters
Volume	89
Issue number	22
DOIs	https://doi.org/10.1063/1.2392988
Publication status	Published - 2006 Dec 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Chen, J., Sekiguchi, T., Fukata, N., Takase, M., Chikyow, T., Yamabe, K., Hasunuma, R., Akasaka, Y., Inumiya, S., Nara, Y., & Yamada, K. (2006). Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. Applied Physics Letters, 89(22), [222104]. https://doi.org/10.1063/1.2392988

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. / Chen, J.; Sekiguchi, T.; Fukata, N.; Takase, M.; Chikyow, T.; Yamabe, K.; Hasunuma, R.; Akasaka, Y.; Inumiya, S.; Nara, Y.; Yamada, K.

In: Applied Physics Letters, Vol. 89, No. 22, 222104, 07.12.2006.

Research output: Contribution to journal › Article › peer-review

Chen, J, Sekiguchi, T, Fukata, N, Takase, M, Chikyow, T, Yamabe, K, Hasunuma, R, Akasaka, Y, Inumiya, S, Nara, Y & Yamada, K 2006, 'Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current', Applied Physics Letters, vol. 89, no. 22, 222104. https://doi.org/10.1063/1.2392988

Chen, J. ; Sekiguchi, T. ; Fukata, N. ; Takase, M. ; Chikyow, T. ; Yamabe, K. ; Hasunuma, R. ; Akasaka, Y. ; Inumiya, S. ; Nara, Y. ; Yamada, K. / Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. In: Applied Physics Letters. 2006 ; Vol. 89, No. 22.

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