Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

J. Chen; T. Sekiguchi; N. Fukata; M. Takase; T. Chikyow; K. Yamabe; R. Hasunuma; Y. Akasaka; S. Inumiya; Y. Nara; K. Yamada

doi:10.1063/1.2392988

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.

Original language	English
Article number	222104
Journal	Applied Physics Letters
Volume	89
Issue number	22
DOIs	https://doi.org/10.1063/1.2392988
Publication status	Published - 2006 Dec 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2392988

Cite this

Chen, J., Sekiguchi, T., Fukata, N., Takase, M., Chikyow, T., Yamabe, K., Hasunuma, R., Akasaka, Y., Inumiya, S., Nara, Y., & Yamada, K. (2006). Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. Applied Physics Letters, 89(22), [222104]. https://doi.org/10.1063/1.2392988

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. / Chen, J.; Sekiguchi, T.; Fukata, N.; Takase, M.; Chikyow, T.; Yamabe, K.; Hasunuma, R.; Akasaka, Y.; Inumiya, S.; Nara, Y.; Yamada, K.

In: Applied Physics Letters, Vol. 89, No. 22, 222104, 07.12.2006.

Research output: Contribution to journal › Article › peer-review

Chen, J, Sekiguchi, T, Fukata, N, Takase, M, Chikyow, T, Yamabe, K, Hasunuma, R, Akasaka, Y, Inumiya, S, Nara, Y & Yamada, K 2006, 'Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current', Applied Physics Letters, vol. 89, no. 22, 222104. https://doi.org/10.1063/1.2392988

Chen, J. ; Sekiguchi, T. ; Fukata, N. ; Takase, M. ; Chikyow, T. ; Yamabe, K. ; Hasunuma, R. ; Akasaka, Y. ; Inumiya, S. ; Nara, Y. ; Yamada, K. / Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current. In: Applied Physics Letters. 2006 ; Vol. 89, No. 22.

@article{e549ca308eee4ac9a0b87fb5f79b7843,

title = "Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current",

abstract = "Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.",

author = "J. Chen and T. Sekiguchi and N. Fukata and M. Takase and T. Chikyow and K. Yamabe and R. Hasunuma and Y. Akasaka and S. Inumiya and Y. Nara and K. Yamada",

year = "2006",

month = dec,

day = "7",

doi = "10.1063/1.2392988",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

AU - Chen, J.

AU - Sekiguchi, T.

AU - Fukata, N.

AU - Takase, M.

AU - Chikyow, T.

AU - Yamabe, K.

AU - Hasunuma, R.

AU - Akasaka, Y.

AU - Inumiya, S.

AU - Nara, Y.

AU - Yamada, K.

PY - 2006/12/7

Y1 - 2006/12/7

N2 - Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.

AB - Leakage sites in hafnium silicon oxynitride gate dielectrics of metal-oxide-semiconductor field-effect transistors were directly identified by means of electron-beam-induced current (EBIC) technique. Leakage sites were observed as bright spots mostly on the periphery of gate. With the gate bias increasing, the EBIC current of bright spots increased exponentially, but the number of bright spots did not increase.

UR - http://www.scopus.com/inward/record.url?scp=33751559564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751559564&partnerID=8YFLogxK

U2 - 10.1063/1.2392988

DO - 10.1063/1.2392988

M3 - Article

AN - SCOPUS:33751559564

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222104

ER -

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this