Abstract
The initial oxidation of a Si(110)-16 × 2 clean surface, both at room temperature (RT) and elevated temperatures (635, 660°C), was investigated by scanning tunneling microscopy (STM). The effects of annealing (300 °C, 15 min) on an RT-oxidized surface were also investigated. On the RT-oxidized surface, a BN site, detected as a bright (B) spot in the filled-state image but as a normal (N) 16 × 2 adatom in the empty-state image, was observed. After annealing, DD, BD, and BB sites were found to exist in addition to the BN site. Here, DD (BD, BB) is a site that appears dark (bright, bright) in its filled-state image and appears dark (dark, bright) in its empty-state image. The relative population is DD > BD ≈ BN > BB. For oxidation at 635°C, DD, BD, and BN sites were observed. For oxidation at 660°C, only the BD site was observed. On the basis of these results, an atomistic process during the initial oxidation of the Si(110)-16 × 2 surface is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 3239-3243 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 46 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - 2007 May 17 |
Keywords
- Initial oxidation processes
- Scanning tunneling microscopy
- Si(110)-16 × 2 surface
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)