Observation of initial oxidation on Si(110)-16 × 2 surface by scanning tunneling microscopy

Hideaki Togashi, Yuya Tarahashi, Atsushi Kato, Atsushi Konno, Hidehito Asaora, Maki Suemitsu

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The initial oxidation of a Si(110)-16 × 2 clean surface, both at room temperature (RT) and elevated temperatures (635, 660°C), was investigated by scanning tunneling microscopy (STM). The effects of annealing (300 °C, 15 min) on an RT-oxidized surface were also investigated. On the RT-oxidized surface, a BN site, detected as a bright (B) spot in the filled-state image but as a normal (N) 16 × 2 adatom in the empty-state image, was observed. After annealing, DD, BD, and BB sites were found to exist in addition to the BN site. Here, DD (BD, BB) is a site that appears dark (bright, bright) in its filled-state image and appears dark (dark, bright) in its empty-state image. The relative population is DD > BD ≈ BN > BB. For oxidation at 635°C, DD, BD, and BN sites were observed. For oxidation at 660°C, only the BD site was observed. On the basis of these results, an atomistic process during the initial oxidation of the Si(110)-16 × 2 surface is discussed.

Original languageEnglish
Pages (from-to)3239-3243
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number5 B
DOIs
Publication statusPublished - 2007 May 17

Keywords

  • Initial oxidation processes
  • Scanning tunneling microscopy
  • Si(110)-16 × 2 surface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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