Precise measurements of the growth rate, Rg, and the surface hydrogen coverage, θH, of the gas-source-molecular-beam-epitaxy-grown Si(100) surface using disilane have been conducted to obtain the reaction order m of the adsorption process. The data points separated into three regions: region (I) for 1-θH<0.5 monolayer (ML) with m = 0.5, region (II) for 0.5<1-θH<0.75 ML with m = 2, and region (III) for 1-θH>0.75 ML with m = 4, which was successfully interpreted by a hydrogen-coverage- and temperature-dependent adsorption kinetics model.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 B|
|Publication status||Published - 1997 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)