TY - JOUR
T1 - Observation of hydrogen-coverage- and temperature-dependent adsorption kinetics of disilane on Si(100) during Si gas-source molecular beam epitaxy
AU - Suemitsu, Maki
AU - Nakazawa, Hideki
AU - Morita, Tomoyuki
AU - Miyamoto, Nobuo
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Precise measurements of the growth rate, Rg, and the surface hydrogen coverage, θH, of the gas-source-molecular-beam-epitaxy-grown Si(100) surface using disilane have been conducted to obtain the reaction order m of the adsorption process. The data points separated into three regions: region (I) for 1-θH<0.5 monolayer (ML) with m = 0.5, region (II) for 0.5<1-θH<0.75 ML with m = 2, and region (III) for 1-θH>0.75 ML with m = 4, which was successfully interpreted by a hydrogen-coverage- and temperature-dependent adsorption kinetics model.
AB - Precise measurements of the growth rate, Rg, and the surface hydrogen coverage, θH, of the gas-source-molecular-beam-epitaxy-grown Si(100) surface using disilane have been conducted to obtain the reaction order m of the adsorption process. The data points separated into three regions: region (I) for 1-θH<0.5 monolayer (ML) with m = 0.5, region (II) for 0.5<1-θH<0.75 ML with m = 2, and region (III) for 1-θH>0.75 ML with m = 4, which was successfully interpreted by a hydrogen-coverage- and temperature-dependent adsorption kinetics model.
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M3 - Article
AN - SCOPUS:0031143859
VL - 36
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -