Observation of hydrogen-coverage- and temperature-dependent adsorption kinetics of disilane on Si(100) during Si gas-source molecular beam epitaxy

Maki Suemitsu, Hideki Nakazawa, Tomoyuki Morita, Nobuo Miyamoto

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19 Citations (Scopus)

Abstract

Precise measurements of the growth rate, Rg, and the surface hydrogen coverage, θH, of the gas-source-molecular-beam-epitaxy-grown Si(100) surface using disilane have been conducted to obtain the reaction order m of the adsorption process. The data points separated into three regions: region (I) for 1-θH<0.5 monolayer (ML) with m = 0.5, region (II) for 0.5<1-θH<0.75 ML with m = 2, and region (III) for 1-θH>0.75 ML with m = 4, which was successfully interpreted by a hydrogen-coverage- and temperature-dependent adsorption kinetics model.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number5 B
Publication statusPublished - 1997 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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