Observation of GaAs—AlxGa1x as heterostructures and quantum‐well‐wire structures using backscattered electron image

Yoshiro Hirayama, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

As a microscale tool for observing GaAs‐Alx Ga1–xAs heterostructures, backscattered electron (BE) images in the scanning electron microscope (SEM) were compared with conventional secondary electron (SE) images. BE images were found to be more sensitive to compositional differences between GaAs and AlxGa1–xAs and less sensitive to surface roughness. BE images have a spatial resolution of 10 nm or better. This method enables the nondestructive observation of ultrafine lateral periodic structures, such as quantum‐well‐wire (QWW) structures, fabricated by compositional disordering technology using focused Ga ion‐beam (Ga‐FIB) implantation into GaAs‐AlxGa1–xAs material.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalJournal of Electron Microscopy Technique
Volume12
Issue number1
DOIs
Publication statusPublished - 1989 Jan 1
Externally publishedYes

Keywords

  • Fine pattern
  • Focused ion beam
  • Intermixing
  • Nondestructive observation
  • SEM

ASJC Scopus subject areas

  • Anatomy

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