TY - JOUR
T1 - Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy
AU - Honda, K.
AU - Ishikawa, K.
AU - Cho, Y.
PY - 2010
Y1 - 2010
N2 - We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibits high performance and high resolution in observing the dopant concentration profile of transistors. In this study, we have measured standard Si samples, which are known to have one-dimensional dopant concentration values, calibrated by using conventional secondary ion mass spectrometry (SIMS). Good quantitative agreement between the SNDM signals and dopant density values was obtained by SIMS. We succeeded in visualizing high-resolution dopant profiles in n- and p-type channel MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of semiconductor devices. Finally, we have observed the dopant depth profiles of an SRAM memory cell by using SNDM, and succeeded in detecting the insufficient extension ion implantation in the PMOS transistor area.
AB - We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibits high performance and high resolution in observing the dopant concentration profile of transistors. In this study, we have measured standard Si samples, which are known to have one-dimensional dopant concentration values, calibrated by using conventional secondary ion mass spectrometry (SIMS). Good quantitative agreement between the SNDM signals and dopant density values was obtained by SIMS. We succeeded in visualizing high-resolution dopant profiles in n- and p-type channel MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of semiconductor devices. Finally, we have observed the dopant depth profiles of an SRAM memory cell by using SNDM, and succeeded in detecting the insufficient extension ion implantation in the PMOS transistor area.
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U2 - 10.1088/1742-6596/209/1/012050
DO - 10.1088/1742-6596/209/1/012050
M3 - Article
AN - SCOPUS:77950483831
VL - 209
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012050
ER -