Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy

Koichiro Honda, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibited high performance and high resolution in observing the dopant concentration profile of transistors. In this study, good quantitative agreement between the SNDM signals and dopant density values obtained by SIMS in standard Si samples, which dopant concentrations have been calibrated. We succeeded in visualizing high-resolution dopant profiles in n- and p-type MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of transistors. Finally, we have succeeded in detecting the dopant profiles of SRAM memory cell transistors.

Original languageEnglish
Title of host publicationReliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials
Pages243-251
Number of pages9
Publication statusPublished - 2010 Nov 5
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1195
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09/11/3009/12/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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