Abstract
Strained Si grown on a relaxed SiGe layer is an attractive material because of its potential for high carrier mobility. We considered that the ion-implantation technique is useful in order to form the relaxed SiGe because the distribution of lattice defects can be accurately controlled. We implanted Ar ion into Si substrates and then grew 100-nm-thick Si 0.8Ge 0.2 at 500°C by the solid source molecular beam epitaxy method. Next we annealed specimens at 900°C. The microstructure of SiGe/Si was investigated by transmission electron microscopy, and the strain relaxation by Raman spectroscopy and X-ray diffractometry. When the Ar-ion implantation energy and ion dose were 25keV and 1 × 10 15 cm -2, respectively, we succeeded in forming highly relaxed SiGe thin film with a dislocation-free flat surface. It was revealed that dislocations, which are necessary for stress relaxation, formed loops and were localized around the interface of the SiGe and the Si substrate.
Original language | English |
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Pages (from-to) | 389-392 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 7 |
Issue number | 4-6 SPEC. ISS. |
DOIs | |
Publication status | Published - 2004 Dec 10 |
Keywords
- High carrier mobility
- Ion implantation
- Silicon-geranium
- Strain relaxation
- Strained silicon
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering