Observation of dislocations in GaAs epitaxial layers

J. Nishizawa, Y. Oyama, Y. Okuno

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1 Citation (Scopus)


Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.

Original languageEnglish
Pages (from-to)925-928
Number of pages4
JournalJournal of Crystal Growth
Issue numberPART 2
Publication statusPublished - 1981 Apr

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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