Observation of dislocations in GaAs epitaxial layers

J. Nishizawa; Y. Oyama; Y. Okuno

doi:10.1016/0022-0248(81)90399-7

Observation of dislocations in GaAs epitaxial layers

J. Nishizawa, Y. Oyama, Y. Okuno

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.

Original language	English
Pages (from-to)	925-928
Number of pages	4
Journal	Journal of Crystal Growth
Volume	52
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-0248(81)90399-7
Publication status	Published - 1981 Apr

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Observation of dislocations in GaAs epitaxial layers",

abstract = "Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.",

author = "J. Nishizawa and Y. Oyama and Y. Okuno",

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AB - Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.

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