TY - JOUR
T1 - Observation of dislocations in GaAs epitaxial layers
AU - Nishizawa, J.
AU - Oyama, Y.
AU - Okuno, Y.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1981/4
Y1 - 1981/4
N2 - Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.
AB - Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.
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U2 - 10.1016/0022-0248(81)90399-7
DO - 10.1016/0022-0248(81)90399-7
M3 - Article
AN - SCOPUS:49049148615
VL - 52
SP - 925
EP - 928
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - PART 2
ER -