@inproceedings{5e75483d89304424bada50bce6fc2264,
title = "Observation of conductive filament formation in an organic non-volatile memory resistor device",
abstract = "In this paper, an organic nonvolatile resistor memory was made from ZnO nanoparticles dispersed in polymethylmethacrylate. The device exhibited a highly reliable characteristic with retention time greater than 10 5 s. The memory effect originated from conductive filament (CF) formation. The formation process of the CFs was observed by measuring device emission under bias. The CFs were further visualized through analyses of cross-sectional high-resolution transmission electron microscopy image and energy dispersive x-ray spectroscopy elemental mapping.",
keywords = "Conductive filament, Device emission, EDS, HRTEM, Organic nonvolatile memory, ZnO NP",
author = "Dao, {T. T.} and Tran, {T. V.} and K. Higashimine and H. Okada and Mott, {Derrick Michael} and S. Maenosono and H. Murata",
year = "2012",
month = jul,
day = "30",
doi = "10.1109/IMFEDK.2012.6218570",
language = "English",
isbn = "9781467308359",
series = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",
pages = "38--39",
booktitle = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",
note = "10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 ; Conference date: 09-05-2012 Through 11-05-2012",
}