Observation of conductive filament formation in an organic non-volatile memory resistor device

T. T. Dao, T. V. Tran, K. Higashimine, H. Okada, Derrick Michael Mott, S. Maenosono, H. Murata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, an organic nonvolatile resistor memory was made from ZnO nanoparticles dispersed in polymethylmethacrylate. The device exhibited a highly reliable characteristic with retention time greater than 10 5 s. The memory effect originated from conductive filament (CF) formation. The formation process of the CFs was observed by measuring device emission under bias. The CFs were further visualized through analyses of cross-sectional high-resolution transmission electron microscopy image and energy dispersive x-ray spectroscopy elemental mapping.

Original languageEnglish
Title of host publicationIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages38-39
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Externally publishedYes
Event10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan
Duration: 2012 May 92012 May 11

Publication series

NameIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Conference

Conference10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
CountryJapan
CityOsaka
Period12/5/912/5/11

Keywords

  • Conductive filament
  • Device emission
  • EDS
  • HRTEM
  • Organic nonvolatile memory
  • ZnO NP

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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