Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4

T. Takaoka, T. Takagaki, Y. Igari, I. Kusunoki

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55 Citations (Scopus)

Abstract

The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 × 10-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalSurface Science
Volume347
Issue number1-2
DOIs
Publication statusPublished - 1996 Feb 10

Keywords

  • Alkenes
  • Auger electron spectroscopy
  • Compound formation
  • Low energy electron diffraction (LEED)
  • Silicon
  • Silicon carbide
  • Surface chemical reaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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