Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4

T. Takaoka; T. Takagaki; Y. Igari; I. Kusunoki

doi:10.1016/0039-6028(95)00957-4

Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C₂H₄

T. Takaoka, T. Takagaki, Y. Igari, I. Kusunoki

Division of Measurements

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The initial stage of carbide layer formation on a Si(100) surface by reaction with C₂H₄ gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C₂H₄ of 5 × 10^-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Surface Science
Volume	347
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00957-4
Publication status	Published - 1996 Feb 10

Keywords

Alkenes
Auger electron spectroscopy
Compound formation
Low energy electron diffraction (LEED)
Silicon
Silicon carbide
Surface chemical reaction

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/0039-6028(95)00957-4

Cite this

@article{0f82d11cb27446198d1166996d5dfd10,

title = "Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4",

abstract = "The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 × 10-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.",

keywords = "Alkenes, Auger electron spectroscopy, Compound formation, Low energy electron diffraction (LEED), Silicon, Silicon carbide, Surface chemical reaction",

author = "T. Takaoka and T. Takagaki and Y. Igari and I. Kusunoki",

note = "Funding Information: We would like to thank Professor J.L. Beeby for the careful revision of the manuscript and Dr. H. Range for useful comments. This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science, and Culture of Japan.",

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T1 - Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4

AU - Takaoka, T.

AU - Takagaki, T.

AU - Igari, Y.

AU - Kusunoki, I.

N1 - Funding Information: We would like to thank Professor J.L. Beeby for the careful revision of the manuscript and Dr. H. Range for useful comments. This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science, and Culture of Japan.

PY - 1996/2/10

Y1 - 1996/2/10

N2 - The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 × 10-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.

AB - The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 × 10-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.

KW - Alkenes

KW - Auger electron spectroscopy

KW - Compound formation

KW - Low energy electron diffraction (LEED)

KW - Silicon

KW - Silicon carbide

KW - Surface chemical reaction

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