Abstract
The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 × 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 × 10-6 Torr for 5 min at a sample temperature of 600°C to the Si(100) surface. Some factors which induce the c(4 × 4) pattern are discussed.
Original language | English |
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Pages (from-to) | 105-110 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 347 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1996 Feb 10 |
Keywords
- Alkenes
- Auger electron spectroscopy
- Compound formation
- Low energy electron diffraction (LEED)
- Silicon
- Silicon carbide
- Surface chemical reaction
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry