Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

Yutaka Oyama; Takayuki Suzuki; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0022-0248(00)00910-6

Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

Yutaka Oyama, Takayuki Suzuki, Ken Suto, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550 °C to 280 °C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.

Original language	English
Pages (from-to)	64-73
Number of pages	10
Journal	Journal of Crystal Growth
Volume	222
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(00)00910-6
Publication status	Published - 2001 Jan

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP",

abstract = "Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550 °C to 280 °C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.",

author = "Yutaka Oyama and Takayuki Suzuki and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2001",

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doi = "10.1016/S0022-0248(00)00910-6",

language = "English",

volume = "222",

pages = "64--73",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

AU - Oyama, Yutaka

AU - Suzuki, Takayuki

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2001/1

Y1 - 2001/1

N2 - Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550 °C to 280 °C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.

AB - Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was kept constant from 550 °C to 280 °C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {0 0 1},{1 1 1}A,B and {1 1 0} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.

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DO - 10.1016/S0022-0248(00)00910-6

M3 - Article

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SP - 64

EP - 73

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -