TY - JOUR
T1 - Observation of a large spin-dependent transport length in organic Spin valves at room temperature
AU - Zhang, Xianmin
AU - Mizukami, Shigemi
AU - Kubota, Takahide
AU - Ma, Qinli
AU - Oogane, Mikihiko
AU - Naganuma, Hiroshi
AU - Ando, Yasuo
AU - Miyazaki, Terunobu
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C 60 as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C 60 layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.
AB - The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C 60 as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C 60 layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.
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U2 - 10.1038/ncomms2423
DO - 10.1038/ncomms2423
M3 - Article
C2 - 23340432
AN - SCOPUS:84879944248
VL - 4
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 1392
ER -