Observation of a filled electronic state in the conduction band of InN

J. J. Kim, H. Makino, K. Kobayashi, P. P. Chen, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, T. Hanada, M. W. Cho, T. Yao

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.

Original languageEnglish
Pages (from-to)1846-1849
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Kim, J. J., Makino, H., Kobayashi, K., Chen, P. P., Ikenaga, E., Kobata, M., Takeuchi, A., Awaji, M., Hanada, T., Cho, M. W., & Yao, T. (2006). Observation of a filled electronic state in the conduction band of InN. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1846-1849. https://doi.org/10.1002/pssc.200565214