Oblique modes effect on terahertz plasma wave resonant detection in InGaAsInAlAs multichannel transistors

A. Shchepetov, C. Gard̀s, Y. Roelens, A. Cappy, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, G. Valušis

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49 Citations (Scopus)

Abstract

We report on the demonstration of narrow terahertz plasma wave resonant detection at low temperature in 200 nm gate length InGaAsInAlAs multichannel high electron mobility transistors. We observe that the resonant detection linewidth is smaller than in full channel high electron mobility transistors. We interpret this shrinking by the effect of multichannel geometry that does not allow oblique plasma mode propagation along the channel.

Original languageEnglish
Article number242105
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Shchepetov, A., Gard̀s, C., Roelens, Y., Cappy, A., Bollaert, S., Boubanga-Tombet, S., Teppe, F., Coquillat, D., Nadar, S., Dyakonova, N., Videlier, H., Knap, W., Seliuta, D., Vadoklis, R., & Valušis, G. (2008). Oblique modes effect on terahertz plasma wave resonant detection in InGaAsInAlAs multichannel transistors. Applied Physics Letters, 92(24), [242105]. https://doi.org/10.1063/1.2945286