Numerical simulation of spin accumulation and tunnel magnetoresistance in single electron tunnelling junctions with a nonmagnetic nanoparticle

H. Wang, S. Mitani, K. Takanashi, H. Imamura

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

For the device designs showing a large tunnel magnetoresistance (TMR) due to spin accumulation, spin dependent single electron tunnelling in double tunnel junctions with a nonmagnetic nanoparticle is investigated by numerical simulations in the sequential tunnelling regime. We show that the bias voltage dependecnce of TMR ratio takes a maximum value just above the Coulomb threshold voltage and the optimal junction parameters for a large TMR ratio are obtained. We also show that the maximum value of the TMR ratio almost agrees with 2P 2/(1+P2) where P is the spin polarization of ferromagnetic electrodes.

Original languageEnglish
Pages (from-to)4443-4447
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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