TY - JOUR
T1 - Numerical simulation of single-electron tunneling in random arrays of small tunnel junctions formed by percolation of conductive nanoparticles
AU - Mizugaki, Yoshinao
AU - Shimada, Hiroshi
AU - Hirano-Iwata, Ayumi
AU - Hirose, Fumihiko
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI Grant Number 17K04979, and by JST-CREST Grant Number JP-MJCR14F. The authors are grateful to M. Moriya and other lab. members in UEC Tokyo for fruitful discussion and technical supports. Nation-wide Cooperative Research Projects, Research Institute of Electrical Communication, Tohoku University are also acknowledged.
Publisher Copyright:
Copyright © 2018 The Institute of Electronics, Information and Communication Engineers.
PY - 2018/10
Y1 - 2018/10
N2 - We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100 × 100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
AB - We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100 × 100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
KW - Circuit simulation
KW - Monte-Carlo simulation
KW - Percolation
KW - Single-electron effects
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U2 - 10.1587/transele.E101.C.836
DO - 10.1587/transele.E101.C.836
M3 - Article
AN - SCOPUS:85054505231
VL - E101C
SP - 836
EP - 839
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 10
ER -