Numerical simulation of plasma waves in high-electron-mobility transistors using kinetic transport model

Akira Satou, Victor Ryzhii, Nizami Vagidov, Vladimir Mitin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study plasma waves in a high-electron-mobility transistor (HEMT) structure by numerical simulation using the kinetic electron transport model. We find that the plasma waves in the gated section of the channel can damp even without the electron collisions with impurities and phonons. The damping is related to the thermal spread of the electron velocity. We also show that the ungated sections of the channel play an important role in determining the plasma frequency and the damping rate because the plasma waves spread over the entire channel.

Original languageEnglish
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
Publication statusPublished - 2009 Oct 27
Externally publishedYes
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: 2009 May 272009 May 29

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
CountryChina
CityBeijing
Period09/5/2709/5/29

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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