Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell

Ming Yi Lee, Yi Chia Tsai, Yiming Li, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages361-364
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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