Abstract
In order to solve the effect of the surface pretreatment of a substrate on nucleation, numerical simulation of the nucleation of diamond on silicon substrate by the CVD method was conducted. Diamond thin film has been confirmed to be connected to the substrate by only the nuclei grown at the beginning of deposition. Therefore, in fabricating diamond thin film, it is important to increase the number of nuclei, namely, nucleation density. The fact that nucleation density on a pretreated substrate is much higher than that on substrate without pretreatment is known empirically, but its mechanism has not been established. In this paper, a two-dimensional nucleation model that consists of a pretreated silicon substrate and reaction gas was proposed. Scarring on the surface of the substrate introduced by surface pretreatment was modeled by a V-shaped notch having two point dislocations. The model was verified by performing numerical simulation of nucleation.
| Original language | English |
|---|---|
| Pages (from-to) | 436-440 |
| Number of pages | 5 |
| Journal | Transactions of the Japan Society of Mechanical Engineers Series A |
| Volume | 61 |
| Issue number | 582 |
| DOIs | |
| Publication status | Published - 1995 |
Keywords
- CVD
- Computational Mechanics
- Diamond Thin Film
- Dislocation
- Notch
- Nucleation
- Silicon Substrate
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering