Numerical simulation of heat and fluid flow in ammonothermal GaN bulk crystal growth process

Yoshio Masuda, Akira Suzuki, Tohru Ishiguro, Chiaki Yokoyama

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed. The autoclave and growing crystal are assumed to be axisymmetric and the raw material is assumed to be a porous medium. Heat transfer by natural convection is discussed in terms of the open-space ratio of the baffle and the height of the crystals. Simulation results show that a larger open-space ratio, at least 30%, is better for the crystal growth from the viewpoints of average surface temperature and flow direction.

Original languageEnglish
Article number08JA05
JournalJapanese journal of applied physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - 2013 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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