Abstract
The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.
Original language | English |
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Pages (from-to) | 940-943 |
Number of pages | 4 |
Journal | International Journal of Heat and Mass Transfer |
Volume | 53 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 2010 Feb 1 |
Keywords
- Ammonothermal growth
- Funnel-shaped baffle
- GaN
- Natural convection
- Numerical simulation
- Temperature
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanical Engineering
- Fluid Flow and Transfer Processes