Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda; A. Suzuki; Y. Mikawa; Y. Kagamitani; T. Ishiguro; Chiaki Yokoyama; Takao Tsukada

doi:10.1016/j.ijheatmasstransfer.2009.11.027

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda, A. Suzuki, Y. Mikawa, Y. Kagamitani, T. Ishiguro, Chiaki Yokoyama, Takao Tsukada

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

Original language	English
Pages (from-to)	940-943
Number of pages	4
Journal	International Journal of Heat and Mass Transfer
Volume	53
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ijheatmasstransfer.2009.11.027
Publication status	Published - 2010 Feb 1

Keywords

Ammonothermal growth
Funnel-shaped baffle
GaN
Natural convection
Numerical simulation
Temperature

ASJC Scopus subject areas

Condensed Matter Physics
Mechanical Engineering
Fluid Flow and Transfer Processes

Access to Document

10.1016/j.ijheatmasstransfer.2009.11.027

Cite this

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape. / Masuda, Y.; Suzuki, A.; Mikawa, Y.; Kagamitani, Y.; Ishiguro, T.; Yokoyama, Chiaki; Tsukada, Takao.

In: International Journal of Heat and Mass Transfer, Vol. 53, No. 5-6, 01.02.2010, p. 940-943.

Research output: Contribution to journal › Article › peer-review

@article{6d6f7045881e47a6b8df7186bf04100e,

title = "Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape",

abstract = "The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.",

keywords = "Ammonothermal growth, Funnel-shaped baffle, GaN, Natural convection, Numerical simulation, Temperature",

author = "Y. Masuda and A. Suzuki and Y. Mikawa and Y. Kagamitani and T. Ishiguro and Chiaki Yokoyama and Takao Tsukada",

year = "2010",

month = feb,

day = "1",

doi = "10.1016/j.ijheatmasstransfer.2009.11.027",

language = "English",

volume = "53",

pages = "940--943",

journal = "International Journal of Heat and Mass Transfer",

issn = "0017-9310",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

AU - Masuda, Y.

AU - Suzuki, A.

AU - Mikawa, Y.

AU - Kagamitani, Y.

AU - Ishiguro, T.

AU - Yokoyama, Chiaki

AU - Tsukada, Takao

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

AB - The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

KW - Ammonothermal growth

KW - Funnel-shaped baffle

KW - GaN

KW - Natural convection

KW - Numerical simulation

KW - Temperature

UR - http://www.scopus.com/inward/record.url?scp=72649089429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72649089429&partnerID=8YFLogxK

U2 - 10.1016/j.ijheatmasstransfer.2009.11.027

DO - 10.1016/j.ijheatmasstransfer.2009.11.027

M3 - Article

AN - SCOPUS:72649089429

VL - 53

SP - 940

EP - 943

JO - International Journal of Heat and Mass Transfer

JF - International Journal of Heat and Mass Transfer

SN - 0017-9310

IS - 5-6

ER -

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Abstract

Keywords

ASJC Scopus subject areas

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