Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda, A. Suzuki, Y. Mikawa, Y. Kagamitani, T. Ishiguro, Chiaki Yokoyama, Takao Tsukada

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

Original languageEnglish
Pages (from-to)940-943
Number of pages4
JournalInternational Journal of Heat and Mass Transfer
Volume53
Issue number5-6
DOIs
Publication statusPublished - 2010 Feb 1

Keywords

  • Ammonothermal growth
  • Funnel-shaped baffle
  • GaN
  • Natural convection
  • Numerical simulation
  • Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanical Engineering
  • Fluid Flow and Transfer Processes

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