Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda; A. Suzuki; Y. Mikawa; Y. Kagamitani; T. Ishiguro; Chiaki Yokoyama; T. Tsukada

doi:10.1016/j.ijheatmasstransfer.2009.11.027

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda, A. Suzuki, Y. Mikawa, Y. Kagamitani, T. Ishiguro, Chiaki Yokoyama, T. Tsukada

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

Original language	English
Pages (from-to)	940-943
Number of pages	4
Journal	International Journal of Heat and Mass Transfer
Volume	53
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ijheatmasstransfer.2009.11.027
Publication status	Published - 2010 Feb 1

Keywords

Ammonothermal growth
Funnel-shaped baffle
GaN
Natural convection
Numerical simulation
Temperature

ASJC Scopus subject areas

Condensed Matter Physics
Mechanical Engineering
Fluid Flow and Transfer Processes

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10.1016/j.ijheatmasstransfer.2009.11.027

Cite this

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title = "Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape",

abstract = "The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.",

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AU - Masuda, Y.

AU - Suzuki, A.

AU - Mikawa, Y.

AU - Kagamitani, Y.

AU - Ishiguro, T.

AU - Yokoyama, Chiaki

AU - Tsukada, T.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

AB - The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

KW - Ammonothermal growth

KW - Funnel-shaped baffle

KW - GaN

KW - Natural convection

KW - Numerical simulation

KW - Temperature

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ER -

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Abstract

Keywords

ASJC Scopus subject areas

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