Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda; A. Suzuki; Y. Mikawa; Y. Kagamitani; T. Ishiguro; Chiaki Yokoyama; Takao Tsukada

doi:10.1016/j.ijheatmasstransfer.2009.11.027

Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape

Y. Masuda, A. Suzuki, Y. Mikawa, Y. Kagamitani, T. Ishiguro, Chiaki Yokoyama, Takao Tsukada

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.

Original language	English
Pages (from-to)	940-943
Number of pages	4
Journal	International Journal of Heat and Mass Transfer
Volume	53
Issue number	5-6
DOIs	https://doi.org/10.1016/j.ijheatmasstransfer.2009.11.027
Publication status	Published - 2010 Feb 1

Keywords

Ammonothermal growth
Funnel-shaped baffle
GaN
Natural convection
Numerical simulation
Temperature

ASJC Scopus subject areas

Condensed Matter Physics
Mechanical Engineering
Fluid Flow and Transfer Processes

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Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - Effects of baffle shape. / Masuda, Y.; Suzuki, A.; Mikawa, Y.; Kagamitani, Y.; Ishiguro, T.; Yokoyama, Chiaki; Tsukada, Takao.

In: International Journal of Heat and Mass Transfer, Vol. 53, No. 5-6, 01.02.2010, p. 940-943.

Research output: Contribution to journal › Article › peer-review

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