Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

T. Kayaba, Y. Hamada, Masumi Saka

Research output: Contribution to journalConference article

Abstract

In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

Original languageEnglish
Pages (from-to)341-344
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4317
DOIs
Publication statusPublished - 2001 Jan 1
Event2nd International Conference on Experimental Mechanics - Singapore, Singapore
Duration: 2000 Nov 292000 Dec 1

Keywords

  • Adsorption
  • CVD
  • Diamond film
  • Molecular dynamics
  • Numerical simulation
  • Reflection
  • Silicon substrate
  • Single crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics'. Together they form a unique fingerprint.

  • Cite this