Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

T. Kayaba; Y. Hamada; Masumi Saka

doi:10.1117/12.429598

Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

T. Kayaba, Y. Hamada, Masumi Saka

ENG - Finemechanics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

Original language	English
Pages (from-to)	341-344
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4317
DOIs	https://doi.org/10.1117/12.429598
Publication status	Published - 2001 Jan 1
Event	2nd International Conference on Experimental Mechanics - Singapore, Singapore Duration: 2000 Nov 29 → 2000 Dec 1

Keywords

Adsorption
CVD
Diamond film
Molecular dynamics
Numerical simulation
Reflection
Silicon substrate
Single crystal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{d10ab971e25d473894991bc8feb3bb38,

title = "Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics",

abstract = "In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.",

keywords = "Adsorption, CVD, Diamond film, Molecular dynamics, Numerical simulation, Reflection, Silicon substrate, Single crystal",

author = "T. Kayaba and Y. Hamada and Masumi Saka",

year = "2001",

month = jan,

day = "1",

doi = "10.1117/12.429598",

language = "English",

volume = "4317",

pages = "341--344",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "2nd International Conference on Experimental Mechanics ; Conference date: 29-11-2000 Through 01-12-2000",

}

TY - JOUR

T1 - Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics

AU - Kayaba, T.

AU - Hamada, Y.

AU - Saka, Masumi

PY - 2001/1/1

Y1 - 2001/1/1

N2 - In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

AB - In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

KW - Adsorption

KW - CVD

KW - Diamond film

KW - Molecular dynamics

KW - Numerical simulation

KW - Reflection

KW - Silicon substrate

KW - Single crystal

UR - http://www.scopus.com/inward/record.url?scp=0034878152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034878152&partnerID=8YFLogxK

U2 - 10.1117/12.429598

DO - 10.1117/12.429598

M3 - Conference article

AN - SCOPUS:0034878152

VL - 4317

SP - 341

EP - 344

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - 2nd International Conference on Experimental Mechanics

Y2 - 29 November 2000 through 1 December 2000

ER -