Abstract
In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.
| Original language | English |
|---|---|
| Pages (from-to) | 341-344 |
| Number of pages | 4 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4317 |
| DOIs | |
| Publication status | Published - 2001 Jan 1 |
| Event | 2nd International Conference on Experimental Mechanics - Singapore, Singapore Duration: 2000 Nov 29 → 2000 Dec 1 |
Keywords
- Adsorption
- CVD
- Diamond film
- Molecular dynamics
- Numerical simulation
- Reflection
- Silicon substrate
- Single crystal
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Kayaba, T., Hamada, Y., & Saka, M. (2001). Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics. Proceedings of SPIE - The International Society for Optical Engineering, 4317, 341-344. https://doi.org/10.1117/12.429598