TY - JOUR
T1 - Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method
AU - Yamamoto, Takuya
AU - Adkar, Nikhil
AU - Okano, Yasunori
AU - Ujihara, Toru
AU - Dost, Sadik
N1 - Publisher Copyright:
© 2016 Elsevier B.V.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/9/15
Y1 - 2017/9/15
N2 - A numerical simulation study was carried out to examine the transport phenomena occurring during the Top-Seeded Solution Growth (TSSG) process of SiC. The simulation model includes the contributions of radiative and conductive heat transfer in the furnace, mass transfer and fluid flow in the melt, and the induced electric and magnetic fields. Results show that the induced Lorentz force is dominant in the melt compared with that of buoyancy. At the relatively low coil frequencies, the effect of the Lorentz force on the melt flow is significant, and the corresponding flow patterns loose their axisymmetry and become almost fully disturbed. However, at the relatively higher frequency values, the flow is steady and the flow patterns remain axisymmetric.
AB - A numerical simulation study was carried out to examine the transport phenomena occurring during the Top-Seeded Solution Growth (TSSG) process of SiC. The simulation model includes the contributions of radiative and conductive heat transfer in the furnace, mass transfer and fluid flow in the melt, and the induced electric and magnetic fields. Results show that the induced Lorentz force is dominant in the melt compared with that of buoyancy. At the relatively low coil frequencies, the effect of the Lorentz force on the melt flow is significant, and the corresponding flow patterns loose their axisymmetry and become almost fully disturbed. However, at the relatively higher frequency values, the flow is steady and the flow patterns remain axisymmetric.
KW - A1, Computer simulation
KW - A1, Fluid flows
KW - A1, Heat transfer
KW - A1, Magnetic fields
KW - A2, Top seeded solution growth
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U2 - 10.1016/j.jcrysgro.2016.12.086
DO - 10.1016/j.jcrysgro.2016.12.086
M3 - Article
AN - SCOPUS:85009347593
VL - 474
SP - 50
EP - 54
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -