Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

S. Nakano; B. Gao; K. Jiptner; H. Harada; Y. Miyamura; T. Sekiguchi; M. Fukuzawa; K. Kakimoto

doi:10.1016/j.jcrysgro.2016.12.007

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

S. Nakano, B. Gao, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have developed a three dimensional Haasen-Alexander-Sumino model to investigate the distribution of dislocation density and residual strain in Si crystals and compared the calculation results with experimental data performed in mono-like and multicrystalline silicon ingots. The results show that the residual strain in a multicrystal is lower than in a mono-like crystal, whereas the dislocation density in the multicrystal is higher than that in the mono-like crystal. This phenomenon is due to the relation between dislocation density and residual strain caused by the difference of activated slip systems in a mono-like crystal and a multicrystal.

Original language	English
Pages (from-to)	130-134
Number of pages	5
Journal	Journal of Crystal Growth
Volume	474
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.12.007
Publication status	Published - 2017 Sept 15
Externally published	Yes

Keywords

A1. Defects
A1. Directional solidification
A2. Seed crystals
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2016.12.007

Cite this

@article{89bb4b089b634733bcb56f4ef239c5a1,

title = "Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells",

abstract = "We have developed a three dimensional Haasen-Alexander-Sumino model to investigate the distribution of dislocation density and residual strain in Si crystals and compared the calculation results with experimental data performed in mono-like and multicrystalline silicon ingots. The results show that the residual strain in a multicrystal is lower than in a mono-like crystal, whereas the dislocation density in the multicrystal is higher than that in the mono-like crystal. This phenomenon is due to the relation between dislocation density and residual strain caused by the difference of activated slip systems in a mono-like crystal and a multicrystal.",

keywords = "A1. Defects, A1. Directional solidification, A2. Seed crystals, B3. Solar cells",

author = "S. Nakano and B. Gao and K. Jiptner and H. Harada and Y. Miyamura and T. Sekiguchi and M. Fukuzawa and K. Kakimoto",

note = "Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = sep,

day = "15",

doi = "10.1016/j.jcrysgro.2016.12.007",

language = "English",

volume = "474",

pages = "130--134",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

AU - Nakano, S.

AU - Gao, B.

AU - Jiptner, K.

AU - Harada, H.

AU - Miyamura, Y.

AU - Sekiguchi, T.

AU - Fukuzawa, M.

AU - Kakimoto, K.

N1 - Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI). Publisher Copyright: © 2016 Elsevier B.V.

PY - 2017/9/15

Y1 - 2017/9/15

N2 - We have developed a three dimensional Haasen-Alexander-Sumino model to investigate the distribution of dislocation density and residual strain in Si crystals and compared the calculation results with experimental data performed in mono-like and multicrystalline silicon ingots. The results show that the residual strain in a multicrystal is lower than in a mono-like crystal, whereas the dislocation density in the multicrystal is higher than that in the mono-like crystal. This phenomenon is due to the relation between dislocation density and residual strain caused by the difference of activated slip systems in a mono-like crystal and a multicrystal.

AB - We have developed a three dimensional Haasen-Alexander-Sumino model to investigate the distribution of dislocation density and residual strain in Si crystals and compared the calculation results with experimental data performed in mono-like and multicrystalline silicon ingots. The results show that the residual strain in a multicrystal is lower than in a mono-like crystal, whereas the dislocation density in the multicrystal is higher than that in the mono-like crystal. This phenomenon is due to the relation between dislocation density and residual strain caused by the difference of activated slip systems in a mono-like crystal and a multicrystal.

KW - A1. Defects

KW - A1. Directional solidification

KW - A2. Seed crystals

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=85008457344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008457344&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.12.007

DO - 10.1016/j.jcrysgro.2016.12.007

M3 - Article

AN - SCOPUS:85008457344

SN - 0022-0248

VL - 474

SP - 130

EP - 134

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this