TY - GEN
T1 - Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells
AU - Sai, Hitoshi
AU - Fujii, Homare
AU - Kanamori, Yoshiaki
AU - Arafune, Koji
AU - Ohshita, Yoshio
AU - Yugami, Hiroo
AU - Yamaguchi, Masafumi
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.
AB - Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.
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U2 - 10.1109/WCPEC.2006.279394
DO - 10.1109/WCPEC.2006.279394
M3 - Conference contribution
AN - SCOPUS:41749093401
SN - 1424400163
SN - 9781424400164
T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
SP - 1191
EP - 1194
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Y2 - 7 May 2006 through 12 May 2006
ER -