Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells

Hitoshi Sai; Homare Fujii; Yoshiaki Kanamori; Koji Arafune; Yoshio Ohshita; Hiroo Yugami; Masafumi Yamaguchi

doi:10.1109/WCPEC.2006.279394

Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells

Hitoshi Sai, Homare Fujii, Yoshiaki Kanamori, Koji Arafune, Yoshio Ohshita, Hiroo Yugami, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1191-1194
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279394
Publication status	Published - 2006 Jan 1
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/WCPEC.2006.279394

Fingerprint Dive into the research topics of 'Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells'. Together they form a unique fingerprint.

Cite this

Sai, H., Fujii, H., Kanamori, Y., Arafune, K., Ohshita, Y., Yugami, H., & Yamaguchi, M. (2006). Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1191-1194). [4059849] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279394

Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells. / Sai, Hitoshi; Fujii, Homare; Kanamori, Yoshiaki; Arafune, Koji; Ohshita, Yoshio; Yugami, Hiroo; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1191-1194 4059849 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sai, H, Fujii, H, Kanamori, Y, Arafune, K, Ohshita, Y, Yugami, H & Yamaguchi, M 2006, Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059849, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 1191-1194, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279394

Sai H, Fujii H, Kanamori Y, Arafune K, Ohshita Y, Yugami H et al. Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1191-1194. 4059849. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279394

Sai, Hitoshi ; Fujii, Homare ; Kanamori, Yoshiaki ; Arafune, Koji ; Ohshita, Yoshio ; Yugami, Hiroo ; Yamaguchi, Masafumi. / Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1191-1194 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

@inproceedings{fb0cb49b48c743b5ac4ecd2b7b78073e,

title = "Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells",

abstract = "Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.",

author = "Hitoshi Sai and Homare Fujii and Yoshiaki Kanamori and Koji Arafune and Yoshio Ohshita and Hiroo Yugami and Masafumi Yamaguchi",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/WCPEC.2006.279394",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "1191--1194",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

TY - GEN

T1 - Numerical analysis and demonstration of submicron antireflective textures for crystalline silicon solar cells

AU - Sai, Hitoshi

AU - Fujii, Homare

AU - Kanamori, Yoshiaki

AU - Arafune, Koji

AU - Ohshita, Yoshio

AU - Yugami, Hiroo

AU - Yamaguchi, Masafumi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.

AB - Submicron surface textures were investigated to reduce the optical loss of Si solar cells. Numerical simulations based on the rigorous coupled-wave approach were performed to obtain the spectral reflectivity of pyramid-type Si textures with submicron period. The results showed that a low mean reflectivity below 3% can be obtained in a wide range of period, and that a suitable combination of period and aspect ratio exists to reduce the reflection loss effectively. Based on the calculation results, tapered subwavelength structures with the period of about 0.1 μm were fabricated on multi-crystalline Si as well as single crystalline Si wafers by fast atom beam etching with a porous alumina mask. A low reflectivity below 2% was successfully obtained from 0.35 to 1.0μm without AR coatings. Test cells with the SWS showed a gain on the short circuit current density due to the suppression of the optical loss.

UR - http://www.scopus.com/inward/record.url?scp=41749093401&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41749093401&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279394

DO - 10.1109/WCPEC.2006.279394

M3 - Conference contribution

AN - SCOPUS:41749093401

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1191

EP - 1194

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

PB - IEEE Computer Society

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -